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FKN2601 Datasheet P-Channel MOSFET

Manufacturer: FETek

Datasheet Details

Part number FKN2601
Manufacturer FETek
File Size 526.68 KB
Description P-Channel MOSFET
Download FKN2601 Download (PDF)

General Description

SOT 23 Pin Configurations The FKN2601 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.

The FKN2601 meet the RoHS and Green Product requirement with full function reliability approved.

Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ PD@TA=70℃ TSTG TJ Thermal Data Symbol RθJA RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -4.5V1 Continuous Drain Current, VGS @ -4.5V1 Pulsed Drain Current2 Total Power Dissipation3 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Ambient 1 (t ≤10s) Thermal Resistance Junction-Case1 Rating 10s Steady State -20 ±12 -3.9 -3.4 -3.1 -2.7 -14 1.32 1 0.84 0.64 -55 to 150 -55 to 150 Units V V A A A W W ℃ ℃ Typ.

Overview

FETek Technology Corp.

FKN2601 P-Ch 20V Fast Switching MOSFETs  Super Low Gate Charge  Green Device Available  Excellent CdV/dt effect decline  Advanced high cell density Trench technology Product Summary BVDSS -20V RDSON 60mΩ ID -3.