IRFS830B Datasheet - Fairchild

500V N-Channel MOSFET

IRFS830B Features

* 4.5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 27 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum R

IRFS830B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFS830B Datasheet (888.88 KB)

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Datasheet Details

Part number:

IRFS830B

Manufacturer:

Fairchild

File Size:

888.88 KB

Description:

500v n-channel mosfet.

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IRFS830B 500V N-Channel MOSFET Fairchild

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IRFS830B Features

IRFS830B General Description

Datasheet Details

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Description:

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