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MPSH10 / MMBTH10
Discrete POWER & Signal Technologies
MPSH10
MMBTH10
C
E C E
TO-92
B
SOT-23
Mark: 3E
B
NPN RF Transistor
This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
25 30 3.
MMBTH10 Datasheet
