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NDB408BE Datasheet - Fairchild

N-Channel MOSFET

NDB408BE Features

* 12 and 11A, 80V. RDS(ON) = 0.16 and 0.20Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/i

NDB408BE General Description

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high ener.

NDB408BE Datasheet (73.06 KB)

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Datasheet Details

Part number:

NDB408BE

Manufacturer:

Fairchild

File Size:

73.06 KB

Description:

N-channel mosfet.
May 1994 NDP408A / NDP408AE / NDP408B / NDP408BE NDB408A / NDB408AE / NDB408B / NDB408BE N-Channel Enhancement Mode Field Effect Transistor General D.

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NDB408BE N-Channel MOSFET Fairchild

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