n-channel mosfet.
67 A, 50 V. RDS(ON) = 0.0145 Ω @ VGS= 5 V RDS(ON) = 0.0115 Ω @ VGS= 10 V. Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V. Rugged in.
such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low i.
These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, p.
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