n-channel mosfet.
75 A, 50 V. RDS(ON) = 0.01 Ω @ VGS= 10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need f.
such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low i.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide super.
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