NDP508B transistor equivalent, n-channel enhancement mode field effect transistor.
19 and 17A, 80V. RDS(ON) = 0.08 and 0.10Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need .
such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low i.
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide super.
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