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NDS8410A - Single 30V N-Channel PowerTrench MOSFET

Description

This N-Channel MOSFET are produced using Fairchild’s proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Features

  • 10.8 A, 30 V RDS(ON) = 12 mΩ @ VGS = 10 V RDS(ON) = 17 mΩ @ VGS = 4.5 V.
  • Ultra-low gate charge.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability DD DD DD DD SO-8 Pin 1 SO-8 SS SS SS GG 54 63 72 81 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continu.

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NDS8410A October 2004 NDS8410A Single 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low inline power loss, and resistance to transients are needed. Features • 10.8 A, 30 V RDS(ON) = 12 mΩ @ VGS = 10 V RDS(ON) = 17 mΩ @ VGS = 4.
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