30N60B3D - HGTG30N60B3D

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Fairchild Semiconductor

Part number	30N60B3D
Manufacturer	Fairchild Semiconductor
File Size	192.78 KB
Description	HGTG30N60B3D
Datasheet	30N60B3D Datasheet
Additional preview pages of the 30N60B3D datasheet.

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching.

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Published: Aug 26, 2015 |