30N65DM6 Datasheet, Mosfet, STMicroelectronics

30N65DM6 Features

• Mosfet Order code STB30N65DM6AG VDS 650 V RDS(on) max. 115 mΩ ID 28 A
• AEC-Q101 qualified
• Fast-recovery body diode
• Lower RDS(on) per area vs previous generatio

PDF File Details

Part number:

30N65DM6

Manufacturer:

STMicroelectronics ↗

File Size:

390.40kb

Download:

📄 Datasheet

Description:

N-channel power mosfet. This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast

30N65DM6 Application

• Applications
• Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode seri

TAGS

30N65DM6

STMicroelectronics

📁 Related Datasheet

30N60 - High speed IGBT (IXYS)
Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A VCES 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions.

30N60A - High speed IGBT (IXYS)
Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A VCES 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions.

30N60A4D - HGT1N30N60A4D (Fairchild Semiconductor)
HGT1N30N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1N30N60A4D is a MOS gated high volt.

30N60B3D - HGTG30N60B3D (Fairchild Semiconductor)
Data Sheet HGTG30N60B3D April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high vol.

30N60C3 - IGBT (IXYS)
GenX3TM 600V IGBTs High-Speed PT IGBTs for 40-100kHz Switching IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (R.

30N05 - N-Channel MOSFET (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 30N05 ·FEATURES ·Drain Current ID= 30A@ TC=25℃ ·Drain Source Voltag.

30N06 - N-Channel MOSFET (Inchange Semiconductor)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.05Ω ·Fast Switching Speed ·100% avalanche tested ·Minimum Lo.

30N06 - N-CHANNEL POWER MOSFET (UTC)
.. UNISONIC TECHNOLOGIES CO., LTD 30N06 30 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 MOSFET DESCRIPTION The UTC 30N06 is a low volta.

30N06 - 60V N-Channel Enhancement Mode Power MOSFET (UMW)
UMW R UMW 30N06 60V N-Channel Enhancement Mode Power MOSFET UMW 30N06 General Description The 30N06 uses advanced trench technology and design to pr.

30N06-Q - N-CHANNEL POWER MOSFET (Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 30N06-Q Power MOSFET 60V, 30A N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 30N06-Q is a low voltage power MOSFET and.