30N60 - High speed IGBT
(IXYS)
Low VCE(sat) IGBT High speed IGBT
IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A
VCES 600 V 600 V
IC25 50 A 50 A
VCE(sat) 2.5 V 3.0 V
Symbol
Test Conditions.
30N60A - High speed IGBT
(IXYS)
Low VCE(sat) IGBT High speed IGBT
IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A
VCES 600 V 600 V
IC25 50 A 50 A
VCE(sat) 2.5 V 3.0 V
Symbol
Test Conditions.
30N60A4D - HGT1N30N60A4D
(Fairchild Semiconductor)
HGT1N30N60A4D
Data Sheet December 2001
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGT1N30N60A4D is a MOS gated high volt.
30N60B3D - HGTG30N60B3D
(Fairchild Semiconductor)
Data Sheet
HGTG30N60B3D
April 2004
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG30N60B3D is a MOS gated high vol.
30N60C3 - IGBT
(IXYS)
GenX3TM 600V IGBTs
High-Speed PT IGBTs for 40-100kHz Switching
IXGA30N60C3 IXGP30N60C3 IXGH30N60C3
Symbol
VCES VCGR VGES VGEM
IC25 IC110 ICM SSOA (R.
30N05 - N-Channel MOSFET
(Inchange Semiconductor)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
30N05
·FEATURES ·Drain Current ID= 30A@ TC=25℃ ·Drain Source Voltag.