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30N60A4D Datasheet - Fairchild Semiconductor

30N60A4D HGT1N30N60A4D

30N60A4D Features

* of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applicat

30N60A4D_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

30N60A4D

Manufacturer:

Fairchild Semiconductor

File Size:

181.19 KB

Description:

Hgt1n30n60a4d.

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30N60A4D 30N60A4D HGT1N30N60A4D Fairchild Semiconductor

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