Part number:
30N60A4D
Manufacturer:
Fairchild Semiconductor
File Size:
181.19 KB
Description:
Hgt1n30n60a4d.
30N60A4D Datasheet (181.19 KB)
Datasheet Details
30N60A4D Features
* of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applicat
30N60A4D Datasheet (181.19 KB)
Datasheet Details
30N60A4D
Fairchild Semiconductor
181.19 KB
Hgt1n30n60a4d.
📁 Related Datasheet
30N60A High speed IGBT (IXYS)
30N60 High speed IGBT (IXYS)
30N60B3D HGTG30N60B3D (Fairchild Semiconductor)
30N60C3 IGBT (IXYS)
30N65DM6 N-channel Power MOSFET (STMicroelectronics)
30N05 N-Channel MOSFET (Inchange Semiconductor)
30N06 N-Channel MOSFET (Inchange Semiconductor)
30N06 N-CHANNEL POWER MOSFET (UTC)
30N60A4D Distributor