Datasheet Specifications
- Part number
- 30N60B3D
- Manufacturer
- Fairchild Semiconductor
- File Size
- 192.78 KB
- Datasheet
- 30N60B3D-FairchildSemiconductor.pdf
- Description
- HGTG30N60B3D
Description
Data Sheet HGTG30N60B3D April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high vol.
Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49170. The diode used inApplications
* operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49172. Ordering Information PART NUMBER PACKAGE BRAND HGTG30N60B3D TO-247 G30N60B3D N30N60B3D Distributors
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