Part number:
30N60B3D
Manufacturer:
Fairchild Semiconductor
File Size:
192.78 KB
Description:
Hgtg30n60b3d.
30N60B3D-FairchildSemiconductor.pdf
Datasheet Details
30N60B3D Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49170. The diode used in
30N60B3D-FairchildSemiconductor.pdf
Datasheet Details
30N60B3D
Fairchild Semiconductor
192.78 KB
Hgtg30n60b3d.
30N60B3D Distributor
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