30N60C3
IXYS
265.09kb
Igbt.
TAGS
📁 Related Datasheet
30N60 - High speed IGBT
(IXYS)
Low VCE(sat) IGBT High speed IGBT
IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A
VCES 600 V 600 V
IC25 50 A 50 A
VCE(sat) 2.5 V 3.0 V
Symbol
Test Conditions.
30N60A - High speed IGBT
(IXYS)
Low VCE(sat) IGBT High speed IGBT
IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A
VCES 600 V 600 V
IC25 50 A 50 A
VCE(sat) 2.5 V 3.0 V
Symbol
Test Conditions.
30N60A4D - HGT1N30N60A4D
(Fairchild Semiconductor)
HGT1N30N60A4D
Data Sheet December 2001
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGT1N30N60A4D is a MOS gated high volt.
30N60B3D - HGTG30N60B3D
(Fairchild Semiconductor)
Data Sheet
HGTG30N60B3D
April 2004
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG30N60B3D is a MOS gated high vol.
30N65DM6 - N-channel Power MOSFET
(STMicroelectronics)
STB30N65DM6AG
Datasheet
Automotive-grade N-channel 650 V, 102 mΩ typ., 28 A MDmesh DM6 Power MOSFET in a D²PAK package
TAB 2 3 1
D²PAK
D(2, TAB)
G(1).
30N05 - N-Channel MOSFET
(Inchange Semiconductor)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
30N05
·FEATURES ·Drain Current ID= 30A@ TC=25℃ ·Drain Source Voltag.
30N06 - N-Channel MOSFET
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.05Ω ·Fast Switching Speed ·100% avalanche tested ·Minimum Lo.
30N06 - N-CHANNEL POWER MOSFET
(UTC)
..
UNISONIC TECHNOLOGIES CO., LTD 30N06
30 Amps, 60 Volts N-CHANNEL POWER MOSFET
1
MOSFET
DESCRIPTION
The UTC 30N06 is a low volta.
30N06 - 60V N-Channel Enhancement Mode Power MOSFET
(UMW)
UMW R
UMW 30N06
60V N-Channel Enhancement Mode Power MOSFET
UMW 30N06
General Description
The 30N06 uses advanced trench technology and design to pr.
30N06-Q - N-CHANNEL POWER MOSFET
(Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD
30N06-Q
Power MOSFET
60V, 30A N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 30N06-Q is a low voltage power MOSFET and.
