*
*
*
*
*
*
* 4.0A, 600V, RDS(on) = 2.5Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche .

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching per.

4N60

4N60-C

4N60-CB

4N60-E

4N60-N

4N60-Q

4N60-R

4N60-S

4N60-TA5

4N600

4N60A

4N60AF

4N60AS