BC516 Description
BC516 BC516 PNP Darlington Transistor This device is designed for applications reguiring extremely high current gain at currents to 1mA. Ratings TA=25°C unless otherwise noted Symbol Parameter VCEO VCBO VEBO IC PD TJ, TSTG Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range 1 TO-92 1....