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BSS123W Datasheet N-channel Logic Level Enhancement Mode Field Effect Transistor

Manufacturer: Fairchild (now onsemi)

Overview: BSS123W — N-Channel Logic Level Enhancement Mode Field Effect Transistor December 2015 BSS123W N-Channel Logic Level Enhancement Mode Field Effect.

General Description

This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology.

This product minimizes on-state resistance while providing rugged, reliable and fast switching performance.

This product is particularly suited for low-voltage, low-current applications such as small servo motor control, power MOSFET gate drivers, logic level transistor, high speed line drivers, power management/power supply and switching applications.

Key Features

  • 0.17 A, 100 V, RDS(ON) = 6 Ω at VGS = 10 V RDS(ON) = 10 Ω at VGS = 4.5 V.
  • High Density Cell Design for Low RDS(ON).
  • Rugged and Reliable.
  • Ultra Small Surface Mount Package.
  • Very Low Capacitance.
  • Fast Switching Speed.
  • Lead Free / RoHS Compliant.

BSS123W Distributor & Price

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