BSS123W Datasheet (N-Channel Logic Level Enhancement Mode Field Effect Transistor)

Part: BSS123W
Manufacturer: Fairchild (official site)
Size: 215.35 KB

BSS123W Key Features

0.17 A, 100 V, RDS(ON) = 6 Ω at VGS = 10 V RDS(ON) = 10 Ω at VGS = 4.5 V
High Density Cell Design for Low RDS(ON)
Rugged and Reliable
Ultra Small Surface Mount Package
Very Low Capacitance
Fast Switching Speed
Lead Free / RoHS pliant

Other BSS123W Datasheets

Manufacturer	Part Number	Description
Diodes Incorporated	BSS123W	N-CHANNEL MOSFET
Micro Commercial Components	BSS123W	N-Channel MOSFET
Diodes Incorporated	BSS123WQ	N-CHANNEL MOSFET
JCET	BSS123	N-Channel MOSFET
NXP Semiconductors	BSS123	N-channel transistor Logic level FET

View all BSS123W datasheets →

BSS123W Description

This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable and fast switching performance. This product is particularly suited for low-voltage, low-current applications such as small servo motor control, power MOSFET gate drivers, logic level transistor, high speed line drivers,...