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FCB110N65F - MOSFET

Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Features

  • 700 V @TJ = 150°C.
  • Typ. RDS(on) = 96 mΩ (Typ. ).
  • Ultra Low Gate Charge (Typ. Qg = 98 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 464 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

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FCB110N65F — N-Channel SuperFET® II FRFET® MOSFET August 2016 FCB110N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 35 A, 110 mΩ Features • 700 V @TJ = 150°C • Typ. RDS(on) = 96 mΩ (Typ.) • Ultra Low Gate Charge (Typ. Qg = 98 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 464 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom/Server Power Supplies • Solar Inverters • Computing Power Supplies • FPD TV Power/Lighting Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.
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