FCB110N65F Key Features
- 700 V @TJ = 150°C
- Typ. RDS(on) = 96 mΩ (Typ.)
- Ultra Low Gate Charge (Typ. Qg = 98 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 464 pF)
- 100% Avalanche Tested
- RoHS pliant
- Part: FCB110N65F
- Description: MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 677.32 KB
Other FCB110N65F Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
FCB110N65F | N-Channel MOSFET |