Datasheet Summary
- N-Channel SuperFET® II FRFET® MOSFET
August 2016
N-Channel SuperFET® II FRFET® MOSFET
650 V, 35 A, 110 mΩ
Features
- 700 V @TJ = 150°C
- Typ. RDS(on) = 96 mΩ (Typ.)
- Ultra Low Gate Charge (Typ. Qg = 98 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 464 pF)
- 100% Avalanche Tested
- RoHS pliant
Applications
- Tele/Server Power Supplies
- Solar Inverters
- puting Power Supplies
- FPD TV Power/Lighting
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. SuperFET® II...
