FCB110N65F mosfet equivalent, mosfet.
* 700 V @TJ = 150°C
* Typ. RDS(on) = 96 mΩ (Typ.)
* Ultra Low Gate Charge (Typ. Qg = 98 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 464 pF) .
* Telecom/Server Power Supplies
* Solar Inverters
* Computing Power Supplies
* FPD TV Power/Lighting
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SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. SuperFET® II FRFET® MOSFET comb.
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