FCB36N60N
Features
- RDS(on) = 81 mΩ (Typ.)@ VGS = 10 V, ID = 18 A
- Ultra low gate charge (Typ. Qg = 86 n C)
- Low effective output capacitance (Typ. Coss.eff = 361 p F)
- 100% avalanche tested
- Ro HS pliant
Description
The Supre MOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiate it from the conventional MOSFETs. This advanced technology and precise process control provide lowest Rsp on-resistance, superior switching performance and ruggedness. Supre MOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/tele power, FPD TV power, ATX power and industrial power applications.
Applications
- Solar Inverter
- AC-DC Power Supply
MOSFET Maximum Ratings TC = 25o C unless otherwise noted-
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single...
