Datasheet Summary
- N-Channel SuperFET® II FRFET® MOSFET
N-Channel SuperFET® II FRFET® MOSFET
600 V, 76 A, 41 mΩ
December 2014
Features
- 650 V @ TJ = 150°C
- Typ. RDS(on) = 36 mΩ
- Ultra Low Gate Charge (Typ. Qg = 277 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 748 pF)
- 100% Avalanche Tested
- RoHS pliant
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche...
