FCP4N60 Key Features
- 650V @TJ = 150°C
- Typ. RDS(on) = 1.0Ω
- Ultra low gate charge (typ. Qg = 12.8nC)
- Low effective output capacitance (typ. Coss.eff = 32pF)
- 100% avalanche tested
- Part: FCP4N60
- Manufacturer: Fairchild (official site)
- Size: 1.08 MB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| FCP099N60E | N-Channel MOSFET |
| FCP104N60 | MOSFET |
| FCP104N60F | N-Channel MOSFET |
| FCP110N65F | MOSFET |
| FCP11N60 | SuperFET MOSFET |
FCP4N60 Description
SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very...