FDAF62N28 Key Features
- 36A, 280V, RDS(on) = 0.051Ω @VGS = 10 V
- Low gate charge ( typical 77 nC)
- Low Crss ( typical 83 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Part: FDAF62N28
- Manufacturer: Fairchild (official site)
- Size: 749.86 KB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| FDAF69N25 | N-Channel MOSFET |
| FDAF59N30 | N-Channel MOSFET |
| FDAF75N28 | N-Channel MOSFET |
| FDA032N08 | N-Channel MOSFET |
| FDA15N65 | N-Channel MOSFET |
FDAF62N28 Description
TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies and...