FDB082N15A Key Features
- RDS(on) = 6.7 mΩ (Typ.) @ VGS = 10 V, ID = 75 A
- Fast Switching Speed
- Low Gate Charge, QG = 64.5 nC (Typ.)
- High Performance Trench Technology for Extremely Low
- High Power and Current Handling Capability
- RoHS pliant
- Part: FDB082N15A
- Description: MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 646.78 KB
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