FDB14N30 mosfet equivalent, n-channel mosfet.
* RDS(on) = 290 m (Max.) @ VGS = 10 V, ID = 7 A
* Low Gate Charge (Typ. 18 nC)
* Low Crss (Typ.17 pF)
* 100% Avalanche Tested
* Improved dv/dt Capabi.
* Lighting
* Uninterruptible Power Supply
* AC-DC Power Supply
D
November 2013
Description
UniFETTM MOSFET .
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