FDB150N10 Key Features
- RDS(on) = 12 mΩ (Typ.) @ VGS = 10 V, ID = 49 A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extremely Low
- High Power and Current Handling Capability
- RoHS pliant
- Part: FDB150N10
- Description: N-Channel MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 574.43 KB
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