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FDB86102LZ - MOSFET

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Part number FDB86102LZ
Manufacturer Fairchild Semiconductor
File Size 209.99 KB
Description MOSFET
Datasheet download datasheet FDB86102LZ Datasheet
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Description

Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8.3 A Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 6.8 A HBM ESD protection level > 6 kV typical (Note 4) Very low Qg and Qgd compared to competing trench technologies Fast switching speed 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and sw

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