Datasheet Details
| Part number | FDB86102LZ |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 209.99 KB |
| Description | MOSFET |
| Download | FDB86102LZ Download (PDF) |
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| Part number | FDB86102LZ |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 209.99 KB |
| Description | MOSFET |
| Download | FDB86102LZ Download (PDF) |
|
|
|
Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8.3 A Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 6.8 A HBM ESD protection level > 6 kV typical (Note 4) Very low Qg and Qgd compared to competing trench technologies Fast switching speed 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss.
G-S zener has been added to enhance ESD voltage level.
Applications DC-DC conversion Inverter Synchronous Rectifier D D G S TO-263AB FDB Series G S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous(Package limited) TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C (Note 1a) -Pulsed Single Pulse Avalanche Energy (Note 3) Power Dissipation TA = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) Thermal Characteristics Ratings 100 ±20 30 40 8.3 50 121 3.1 2 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1) (Note 1a) 1.9 40 °C/W Device Marking FDB86102LZ Device FDB86102LZ Package TO-263AB Reel Size 330mm Tape Width 24 mm Quantity 800 units ©2011 Fairchild Semiconductor Corporation FDB86102LZ Rev.C1 1 www.fairchildsemi.com FDB86102LZ N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage
FDB86102LZ N-Channel PowerTrench® MOSFET FDB86102LZ N-Channel PowerTrench® MOSFET 100 V, 30 A, 24 mΩ May.
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