Datasheet4U Logo Datasheet4U.com

FDB86135 - MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized for the on-state resistance and yet maintain superior switching performance.

DC-DC primary bridge

Key Features

  • Shielded Gate MOSFET Technology.
  • Max RDS(on) = 3.5mΩ at VGS = 10V, ID = 75A.
  • Fast Switching Speed.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant General.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDB86366-F085 N-Channel Power MOSFET ON Semiconductor
FDB86563-F085 N-Channel Power MOSFET ON Semiconductor
FDB86566-F085 N-Channel Power MOSFET ON Semiconductor
FDB8030L N-Channel MOSFET ON Semiconductor
FDB8441-F085 N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDB86102LZ MOSFET
FDB86360_F085 MOSFET
FDB86363_F085 MOSFET
FDB86366_F085 MOSFET
FDB86563_F085 MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDB86135 N-Channel Shielded Gate PowerTrench® MOSFET FDB86135 N-Channel Shielded Gate PowerTrench® MOSFET 100V, 176A, 3.5mΩ May 2013 Features • Shielded Gate MOSFET Technology • Max RDS(on) = 3.5mΩ at VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.