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FDB86135 - MOSFET

Datasheet Summary

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized for the on-state resistance and yet maintain superior switching performance.

DC-DC primary bridge

Features

  • Shielded Gate MOSFET Technology.
  • Max RDS(on) = 3.5mΩ at VGS = 10V, ID = 75A.
  • Fast Switching Speed.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant General.

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Datasheet Details

Part number FDB86135
Manufacturer Fairchild Semiconductor
File Size 205.33 KB
Description MOSFET
Datasheet download datasheet FDB86135 Datasheet
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FDB86135 N-Channel Shielded Gate PowerTrench® MOSFET FDB86135 N-Channel Shielded Gate PowerTrench® MOSFET 100V, 176A, 3.5mΩ May 2013 Features • Shielded Gate MOSFET Technology • Max RDS(on) = 3.5mΩ at VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
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