Datasheet4U Logo Datasheet4U.com

FDB86102LZ - MOSFET

Datasheet Summary

Description

Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8.3 A Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 6.8 A HBM ESD protection level > 6 kV typical (Note 4) Very low Qg and Qgd compared to competing trench technologies Fast switching speed 100% UIL Teste

Features

  • General.

📥 Download Datasheet

Datasheet preview – FDB86102LZ

Datasheet Details

Part number FDB86102LZ
Manufacturer Fairchild Semiconductor
File Size 209.99 KB
Description MOSFET
Datasheet download datasheet FDB86102LZ Datasheet
Additional preview pages of the FDB86102LZ datasheet.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FDB86102LZ N-Channel PowerTrench® MOSFET FDB86102LZ N-Channel PowerTrench® MOSFET 100 V, 30 A, 24 mΩ May 2011 Features General Description „ Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8.3 A „ Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 6.8 A „ HBM ESD protection level > 6 kV typical (Note 4) „ Very low Qg and Qgd compared to competing trench technologies „ Fast switching speed „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
Published: |