FDB86363_F085 - MOSFET

Datasheet Summary

Features

Typical RDS(on) = 2.0 mΩ at VGS = 10V, ID = 80 A.
Typical Qg(tot) = 131 nC at VGS = 10V, ID = 80 A.
UIS Capability.
RoHS Compliant.
Qualified to AEC Q101.

Fairchild Semiconductor

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Datasheet Details

Part number	FDB86363_F085
Manufacturer	Fairchild Semiconductor
File Size	389.07 KB
Description	MOSFET
Datasheet	FDB86363_F085 Datasheet
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FDB86363_F085 N-Channel PowerTrench® MOSFET FDB86363_F085 N-Channel PowerTrench® MOSFET 80 V, 110 A, 2.4 mΩ June 2014 DD Features Typical RDS(on) = 2.0 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 131 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator Primary Switch for 12V Systems GS TO-263 FDB SERIES G S For current package drawing, please refer to the Fairchild website at www.fairchildsemi.com/packaging MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.

Published: Feb 15, 2016 |