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FDB86360_F085 - MOSFET

Key Features

  • Typ rDS(on) = 1.5mΩ at VGS = 10V, ID = 80A.
  • Typ Qg(tot) = 207nC at VGS = 10V, ID = 80A.
  • UIS Capability.
  • RoHS Compliant.
  • Qualified to AEC Q101.

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Full PDF Text Transcription (Reference)

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FDB86360_F085 N-Channel Power Trench® MOSFET FDB86360_F085 N-Channel Power Trench® MOSFET 80V, 110A, 1.8mΩ January 2014 DD Features „ Typ rDS(on) = 1.5mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 207nC at VGS = 10V, ID = 80A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Integrated Starter/alternator „ Primary Switch for 12V Systems GS TO-263 FDB SERIES G S For current package drawing, please refer to the Fairchild  website at www.fairchildsemi.