FDB86360_F085 - MOSFET

Datasheet Summary

Features

Typ rDS(on) = 1.5mΩ at VGS = 10V, ID = 80A.
Typ Qg(tot) = 207nC at VGS = 10V, ID = 80A.
UIS Capability.
RoHS Compliant.
Qualified to AEC Q101.

Fairchild Semiconductor

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Datasheet Details

Part number	FDB86360_F085
Manufacturer	Fairchild Semiconductor
File Size	340.51 KB
Description	MOSFET
Datasheet	FDB86360_F085 Datasheet
Additional preview pages of the FDB86360_F085 datasheet.

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FDB86360_F085 N-Channel Power Trench® MOSFET FDB86360_F085 N-Channel Power Trench® MOSFET 80V, 110A, 1.8mΩ January 2014 DD Features Typ rDS(on) = 1.5mΩ at VGS = 10V, ID = 80A Typ Qg(tot) = 207nC at VGS = 10V, ID = 80A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternator Primary Switch for 12V Systems GS TO-263 FDB SERIES G S For current package drawing, please refer to the Fairchild website at www.fairchildsemi.

Published: Feb 15, 2016 |