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FDB86135 Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

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General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized for the on-state resistance and yet maintain superior switching performance.

Applications • DC-DC primary bridge • DC-DC Synchronous rectification • Hot swap D D GS D2-PAK FDB Series G MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Curren - Continuous (Silicon Limited) - Continuous( Package Limited) - Continuous - Pulsed Single Pulsed Avalanche Energy Power Dissipation - TC = 25oC - TA = 25oC Operating and Storage Temperature Range TC = 25oC TC = 25oC TC = 25oC(Note 1a) (Note 3) (Note 1a) (Note 1b) S Ratings 100 ±20 176 120 75 704 658 227 2.4 -55 to +175 Units V V A A mJ W W/oC oC Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Device Marking FDB86135 Device FDB86135 Package D2-PAK (Note 1) (Note 1a) Ratings 0.66 62.5 Reel Size 330mm Tape Width 24mm Units oC/W Quantity 800 ©2011 Fairchild Semiconductor Corporation FDB86135 Rev.

Overview

FDB86135 N-Channel Shielded Gate PowerTrench® MOSFET FDB86135 N-Channel Shielded Gate PowerTrench® MOSFET 100V, 176A, 3.

Key Features

  • Shielded Gate MOSFET Technology.
  • Max RDS(on) = 3.5mΩ at VGS = 10V, ID = 75A.
  • Fast Switching Speed.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant General.

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