FDB86135 - MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDB86135
Manufacturer	Fairchild Semiconductor
File Size	205.33 KB
Description	MOSFET
Datasheet	FDB86135 Datasheet
Additional preview pages of the FDB86135 datasheet.

Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. DC-DC primary bridge DC-DC Synchronous rectification Hot swap D D GS D2-PAK FDB Series G MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID EAS PD TJ, TSTG Parameter Drain to

Features

Shielded Gate MOSFET Technology.
Max RDS(on) = 3.5mΩ at VGS = 10V, ID = 75A.
Fast Switching Speed.
Low Gate Charge.
High Performance Trench Technology for Extremely Low RDS(on).
High Power and Current Handling Capability.
RoHS Compliant General.

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Published: Feb 15, 2016 |