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FDB86360_F085 Key Features

  • Typ rDS(on) = 1.5mΩ at VGS = 10V, ID = 80A
  • Typ Qg(tot) = 207nC at VGS = 10V, ID = 80A
  • UIS Capability
  • RoHS pliant
  • Qualified to AEC Q101

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FDB86360_F085 Description

FDB86360_F085 N-Channel Power Trench® MOSFET FDB86360_F085 N-Channel Power Trench® MOSFET 80V, 110A, 1.8mΩ January 2014.