FDB8874 mosfet equivalent, n-channel mosfet.
* rDS(ON) = 4.7mΩ , VGS = 10V, ID = 40A
* rDS(ON) = 6.0mΩ , VGS = 4.5V, ID = 40A
* High performance trench technology for extremely low rDS(ON)
* Low gate.
* DC/DC converters
* High power and current handling capability
D
GATE
G
SOURCE DRAIN (FLANGE)
TO-263AB
FDB .
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