* 1.1 A, 200 V. RDS(ON) = 725 mΩ @ VGS = 10 V
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability

* DC/DC converter D D S 1 2 G 6 5 4 SuperSOT TM -6 D D 3 Absolute Maximum Ratings Symbol VDSS VGSS ID PD T.

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching s.

FDC2112

FDC2114

FDC2212

FDC2214

FDC2310

FDC2512

FDC2710

FDC-xx

FDC05

FDC05-48S120

FDC10

FDC1004

FDC1004Q