FDC3601N Datasheet - Fairchild Semiconductor

N-Channel MOSFET

FDC3601N Features

* 1.0 A, 100 V. RDS(ON)= 500 mΩ @ VGS = 10 V RDS(ON)= 550 mΩ @ VGS = 6.0 V

* Low gate charge (3.7nC typical)

* Fast switching speed.

* High performance trench technology for extremely low R DS(ON) .

* SuperSOTTM-6 package: small footprint 72% (smaller than

FDC3601N General Description

These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptiona.

FDC3601N Datasheet (91.96 KB)

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Datasheet Details

Part number:

FDC3601N

Manufacturer:

Fairchild Semiconductor

File Size:

91.96 KB

Description:

N-channel mosfet.

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FDC3601N N-Channel MOSFET Fairchild Semiconductor

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FDC3601N Features

FDC3601N General Description

Datasheet Details

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