FDC365P mosfet equivalent, p-channel powertrench mosfet.
* Max rDS(on) = 55mΩ at VGS = -10V, ID = -4.2A
* Max rDS(on) = 80mΩ at VGS = -4.5V, ID = -3.2A
* RoHS Compliant
November 2007
tm
General Description
This P-C.
Applications
* Inverter
* Power Supplies
S D D
Pin 1
D D
SuperSOTTM -6
G
D1 D2 G3
6D 5D 4S
MOSFET Maxim.
This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications.
Applications
* Inverter <.
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