FDC365P Description
This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications.
FDC365P Key Features
- Max rDS(on) = 55mΩ at VGS = -10V, ID = -4.2A
- Max rDS(on) = 80mΩ at VGS = -4.5V, ID = -3.2A
- RoHS pliant