* 3.7 A, 100 V. RDS(ON) = 70 mΩ @ VGS = 10 V RDS(ON) = 80 mΩ @ VGS = 6.0 V
* High performance trench technology for extremely low RDS(ON)
* Low gate charge (2.

* DC/DC converter
* Load Switching Bottom Drain G S S S SuperSOT-6 TM 1 S 6 5 4 2 3 S FLMP Absolute Maxim.

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching s.

FDC3612

FDC3601N

FDC365P

FDC3400

FDC3512

FDC3535

FDC37B72X

FDC37B77X

FDC37B787

FDC37B78X

FDC37C651

FDC37C652

FDC37C663