FDD4141-F085 Datasheet | Fairchild Semiconductor

Features - Max r DS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A - Max r DS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A - High performance trench technology for extremely low r DS(on) - Qualified to AEC Q101 - Ro HS pliant General Description This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary Power Trench® technology to deliver low r DS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. and optimized switching performance capability reducing power dissipation losses in converter/inverter applications. Applications - Inverter - Power Supplies D -P A52 K TO -2 (T O -252) MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25°C TA = 25°C (Note 1a) (Note 3) TC = 25°C TC = 25°C TA = 25°C (Note 1a) Ratings -40 ±20 -50 -58 -10.8 -100 337 69 2.4 -55 to +175 m J W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Maximum Thermal Resistance, Junction to Case Maximum Thermal Resistance, Junction to Ambient (Note 1a) 1.8 52 °C/W Package Marking and Ordering Information Device Marking FDD4141 Device FDD4141_F085 Package D-PAK (TO-252) Reel Size 13’’ Tape Width 12mm Quantity 2500 units .fairchildsemi. ©2013 Fairchild Semiconductor Corporation FDD4141_F085 Rev.C1 http://.. FDD4141_F085 P-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250μA, VGS = 0V ID = -250μA, referenced to 25°C VDS = -32V, VGS = 0V VGS =...