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FDD4141-F085 - P-Channel PowerTrench MOSFET

General Description

This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications.

Key Features

  • Max rDS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A.
  • Max rDS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A.
  • High performance trench technology for extremely low rDS(on).
  • Qualified to AEC Q101.
  • RoHS Compliant General.

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Full PDF Text Transcription (Reference)

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FDD4141_F085 P-Channel PowerTrench® MOSFET November 2013 FDD4141_F085 P-Channel PowerTrench® MOSFET -40V, -50A, 12.3mΩ Features „ Max rDS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A „ Max rDS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A „ High performance trench technology for extremely low rDS(on) „ Qualified to AEC Q101 „ RoHS Compliant General Description This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. and optimized switching performance capability reducing power dissipation losses in converter/inverter applications.