FDD4141 P-Channel PowerTrench MOSFET

Fairchild Semiconductor

Description

www.DataSheet4U.com FDD4141 P-Channel PowerTrench® MOSFET July 2007 FDD4141 P-Channel PowerTrench® MOSFET -40V, -50A, 12.3mΩ .
This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss.

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Datasheet Specifications

Part number: FDD4141
Manufacturer: Fairchild Semiconductor
File Size: 270.27 KB
Datasheet: FDD4141_FairchildSemiconductor.pdf
Description: P-Channel PowerTrench MOSFET

Features

* Max rDS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A
* Max rDS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A
* High performance trench technology for extremely low rDS(on)

Applications

* and optimized switching performance capability reducing power dissipation losses in converter/inverter applications. Applications
* Inverter
* Power Supplies S D G S G D -PA K TO -2 52 (TO -252) D MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS Paramete

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FDD4141 P-Channel PowerTrench MOSFET Fairchild Semiconductor

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