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Fairchild Semiconductor Electronic Components Datasheet

FDD4141 Datasheet

P-Channel PowerTrench MOSFET

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FDD4141
P-Channel PowerTrench® MOSFET
-40V, -50A, 12.3m
Features
„ Max rDS(on) = 12.3mat VGS = -10V, ID = -12.7A
„ Max rDS(on) = 18.0mat VGS = -4.5V, ID = -10.4A
„ High performance trench technology for extremely low rDS(on)
„ RoHS Compliant
July 2007
tm
General Description
This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and optimized Bvdss capability to offer
superior performance benefit in the applications. and optimized
switching performance capability reducing power dissipation
losses in converter/inverter applications.
Applications
„ Inverter
„ Power Supplies
G
S
D
DT O- P-2A5K2
(TO-252)
S
G
D
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25°C
TC = 25°C
TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
-40
±20
-50
-58
-10.8
-100
337
69
2.4
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.8
52
°C/W
Device Marking
FDD4141
Device
FDD4141
Package
D-PAK (TO-252)
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©2007 Fairchild Semiconductor Corporation
FDD4141 Rev.C
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDD4141 Datasheet

P-Channel PowerTrench MOSFET

No Preview Available !

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Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = -250µA, VGS = 0V
-40
V
ID = -250µA, referenced to 25°C
-29 mV/°C
VDS = -32V, VGS = 0V
VGS = ±20V, VDS = 0V
-1
±100
µA
nA
On Characteristics
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = -250µA
-1 -1.8 -3
V
ID = -250µA, referenced to 25°C
5.8 mV/°C
VGS = -10V, ID = -12.7A
VGS = -4.5V, ID = -10.4A
VGS = -10V, ID = -12.7A,
TJ = 125°C
VDS = -5V, ID = -12.7A
10.1 12.3
14.5 18.0 m
15.3 18.7
38 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = -20V, VGS = 0V,
f = 1MHz
f = 1MHz
2085
360
210
4.6
2775
480
310
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = -20V, ID = -12.7A,
VGS = -10V, RGEN = 6
VGS = 0V to -10V
VGS = 0V to -5V
VDD = -20V,
ID = -12.7A
10 19 ns
7 13 ns
38 60 ns
15 27 ns
36 50 nC
19 27 nC
7 nC
8 nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -12.7A (Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = -12.7A, di/dt = 100A/µs
-0.8 -1.2
29 44
26 40
V
ns
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a) 52°C/W when mounted on a
1 in2 pad of 2 oz copper
b) 100°C/W when mounted
on a minimum pad.
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting TJ = 25°C, L = 3mH, IAS = 15A, VDD = 40V, VGS = 10V.
©2007 Fairchild Semiconductor Corporation
FDD4141 Rev.C
2
www.fairchildsemi.com


Part Number FDD4141
Description P-Channel PowerTrench MOSFET
Maker Fairchild Semiconductor
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