FDD6612A - 30V N-Channel MOSFET
FDD6612A Features
* 30 A, 30 V RDS(ON) = 20 mΩ @ VGS = 10 V RDS(ON) = 28 mΩ @ VGS = 4.5 V
* Low gate charge
* Fast Switching
* High performance trench technology for extremely low RDS(ON) D G S DTO-P-2A5K2 (TO-252) GDS I-PAK (TO-251AA) D G S Absolute Maximum Ratings TA=25oC u