FDD6644 Datasheet | Fairchild Semiconductor

FDD6644/FDU6644 April 2001 FDD6644/FDU6644 30V N-Channel Power Trench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features - 67 A, 30 V. RDS(ON) = 8.5 mΩ @ VGS = 10 V RDS(ON) = 10.5 mΩ @ VGS = 4.5 V Applications - DC/DC converter - High performance trench technology for extremely low RDS(ON) - Low gate charge (25 n C typical) - High power and current handling capability I-PAK (TO-251AA) G D S D-PAK TO-252...