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FDD6782A Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDD6782A N-Channel Power Trench® MOSFET FDD6782A N-Channel PowerTrench® MOSFET January 2009 25 V, 10.

General Description

„ Max rDS(on) = 10.5 mΩ at VGS = 10 V, ID = 14.9 A „ Max rDS(on) = 24.0 mΩ at VGS = 4.5 V, ID = 11.0 A „ 100% UIL test „ RoHS pliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(on) and fast switching speed.

Applications „ Vcore DC-DC for Desktop puters and Servers „ VRM for Intermediate Bus Architecture G S D DTO-P-2A5K2 (TO-252) D G S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 25 ±20 20 42 20 100 12 31 3.7 -55 to +175 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 4.8 (Note 1a) 40 °C/W Device Marking FDD6782A Device FDD6782A Package D-PAK (TO-252) Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units ©2009 Fairchild Semiconductor Corporation 1 FDD6782A Rev.C .fairchildsemi.

Key Features

  • General.

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