FDG315N mosfet equivalent, n-channel logic level powertrench mosfet.
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2 A, 30 V. RDS(ON) = 0.12 Ω @ VGS = 10 V RDS(ON) = 0.16 Ω @ VGS = 4.5 V.
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Low gate charge (2.1nC typical). High performance trench technology for.
where low in-line power loss and fast switching are required.
Features
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2 A, 30 V. RDS(ON) = 0.12 Ω @ VGS = 10 V R.
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