FDG311N mosfet equivalent, n-channel 2.5v specified powertrench mosfet.
*
1.9 A, 20 V. RDS(ON) = 0.115 Ω @ VGS = 4.5 V RDS(ON) = 0.150 Ω @ VGS = 2.5 V.
*
*
*
Low gate charge (3nC typical). High performance trench technology .
Features
*
1.9 A, 20 V. RDS(ON) = 0.115 Ω @ VGS = 4.5 V RDS(ON) = 0.150 Ω @ VGS = 2.5 V.
*
*
*
Low g.
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices ar.
Image gallery
TAGS
Download (Size : 89.54KB)