FDG316P mosfet equivalent, p-channel logic level powertrench mosfet.
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-1.6 A, -30 V. RDS(ON) = 0.19 Ω @ VGS = -10 V RDS(ON) = 0.30 Ω @ VGS = -4.5 V.
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Low gate charge (3.5nC typical). High performance trench technolo.
where low in-line power loss and fast switching are required.
Features
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-1.6 A, -30 V. RDS(ON) = 0.19 Ω @ VGS = -1.
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suite.
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