FDI3652 - N-Channel MOSFET

Features

r DS(ON) = 14mΩ (Typ. ), VGS = 10V, ID = 61A.
Qg(tot) = 41nC (Typ. ), VGS = 10V.
Low Miller Charge.
Low QRR Body Diode.
UIS Capability (Single Pulse and Repetitive Pulse).
Qualified to AEC Q101 Formerly developmental type 82769.

FDI3652 N-Channel MOSFET by Fairchild Semiconductor - Datasheet Preview — Datasheet preview – FDI3652

Datasheet Details

Part number	FDI3652
Manufacturer	Fairchild Semiconductor (now onsemi)
File Size	272.26 KB
Description	N-Channel MOSFET
Datasheet	FDI3652 Datasheet
Additional preview pages of the FDI3652 datasheet.

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Full PDF Text Transcription

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FDB3652 / FDP3652 / FDI3652 October 2002 FDB3652 / FDP3652 / FDI3652 N-Channel PowerTrench® MOSFET 100V, 61A, 16mΩ Features • r DS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 61A • Qg(tot) = 41nC (Typ.

Published: Mar 30, 2005 |