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FDJ1032C - Complementary PowerTrench MOSFET

General Description

These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Key Features

  • Q1.
  • 2.8 A,.
  • 20 V.
  • Q2 3.2 A, 20 V.
  • Low gate charge RDS(ON) = 160 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 230 mΩ @ VGS =.
  • 2.5 V RDS(ON) = 390 mΩ @ VGS =.
  • 1.8 V RDS(ON) = 90 mΩ @ VGS = 4.5 V RDS(ON) = 130 mΩ @ VGS = 2.5 V.
  • High performance trench technology for extremely low RDS(ON).
  • FLMP SC75 package: Enhanced thermal performance in industry-standard package size.
  • RoHS Compliant General.

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FDJ1032C Complementary PowerTrench® MOSFET F FDJ1032C Complementary PowerTrench® MOSFET June 2008 Features ■ Q1 –2.8 A, –20 V. ■ Q2 3.2 A, 20 V. ■ Low gate charge RDS(ON) = 160 mΩ @ VGS = –4.5 V RDS(ON) = 230 mΩ @ VGS = –2.5 V RDS(ON) = 390 mΩ @ VGS = –1.8 V RDS(ON) = 90 mΩ @ VGS = 4.5 V RDS(ON) = 130 mΩ @ VGS = 2.5 V ■ High performance trench technology for extremely low RDS(ON) ■ FLMP SC75 package: Enhanced thermal performance in industry-standard package size ■ RoHS Compliant General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.