Datasheet Summary
July 2004
P-Channel -2.5 Vgs Specified PowerTrench MOSFET
General Description
This P-Channel -2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
Features
- - 4.2 A,
- 20 V. RDS(ON) = 70 mΩ @ VGS =
- 4.5 V RDS(ON) = 120 mΩ @ VGS =
- 2.5 V
- Low gate charge
- High performance trench technology for extremely low RDS(ON)
- pact industry standard SC75-6 surface mount package
Applications
- Battery management
- Load switch
Bottom Drain
4 5
3 2 1
SC75-6...