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FDJ129P - P-Channel MOSFET

General Description

This P-Channel -2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.

It has been optimized for battery power management applications.

Key Features

  • 4.2 A,.
  • 20 V. RDS(ON) = 70 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 120 mΩ @ VGS =.
  • 2.5 V.
  • Low gate charge.
  • High performance trench technology for extremely low RDS(ON).
  • Compact industry standard SC75-6 surface mount package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDJ129P July 2004 FDJ129P P-Channel -2.5 Vgs Specified PowerTrench MOSFET General Description This P-Channel -2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –4.2 A, –20 V. RDS(ON) = 70 mΩ @ VGS = –4.5 V RDS(ON) = 120 mΩ @ VGS = –2.