FDJ1032C Overview
These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. VDS = 10 V, VGS = 0 V, f = 1.0 MHz Q2:.
FDJ1032C Key Features
- Q1 -2.8 A, -20 V
- Q2 3.2 A, 20 V
- Low gate charge
- High performance trench technology for extremely low RDS(ON)
- FLMP SC75 package: Enhanced thermal performance in industry-standard package size
- RoHS pliant