Datasheet4U Logo Datasheet4U.com

FDM606P - P-Channel 1.8V Logic Level Power Trench MOSFET

Description

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

  • Fast switching.
  • rDS(ON) = 0.026Ω (Typ), VGS = -4.5V.
  • rDS(ON) = 0.033Ω (Typ), VGS = -2.5V.
  • rDS(ON) = 0.052Ω (Typ), VGS = -1.8V.

📥 Download Datasheet

Datasheet preview – FDM606P

📁 Similar Datasheet

  • FDM-2B - FDM-2B (ETC)
  • FDM100-0045SP - Buck Chopper (IXYS Corporation)
  • FDM21-05QC - Power MOSFET (IXYS Corporation)
  • FDM3622 - N-Channel MOSFET (ON Semiconductor)
  • FDMA037N08LC - N-Channel MOSFET (ON Semiconductor)
  • FDMA1023PZ - Dual P-Channel MOSFET (ON Semiconductor)
  • FDMA1024NZ - Dual N-Channel MOSFET (ON Semiconductor)
  • FDMA1027P - Dual P-Channel MOSFET (ON Semiconductor)
  • FDMA1028NZ - Dual N-Channel Power MOSFET (ON Semiconductor)
  • FDMA1029PZ - Dual P-Channel MOSFET (ON Semiconductor)
Other Datasheets by Fairchild Semiconductor
  • FDM6296 - Single N-Channel / Logic-Level / PowerTrench MOSFET
  • FDM2452NZ - Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
  • FDM3300NZ - N-Channel MOSFET
  • FDM3622 - N-Channel PowerTrench MOSFET
  • FDMA0104 - N-Channel MOSFET
  • FDMA1023PZ - Dual P-Channel PowerTrench MOSFET
  • FDMA1024NZ - Dual N-Channel PowerTrench MOSFET
  • FDMA1025P - Dual P-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
FDM606P July 2002 FDM606P P-Channel 1.8V Logic Level Power Trench® MOSFET General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. Features • Fast switching • rDS(ON) = 0.026Ω (Typ), VGS = -4.5V • rDS(ON) = 0.033Ω (Typ), VGS = -2.5V • rDS(ON) = 0.052Ω (Typ), VGS = -1.
Published: |