FDM606P mosfet equivalent, p-channel 1.8v logic level power trench mosfet.
* Fast switching
* rDS(ON) = 0.026Ω (Typ), VGS = -4.5V
* rDS(ON) = 0.033Ω (Typ), VGS = -2.5V
* rDS(ON) = 0.052Ω (Typ), VGS = -1.8V
Applications
* Loa.
Features
* Fast switching
* rDS(ON) = 0.026Ω (Typ), VGS = -4.5V
* rDS(ON) = 0.033Ω (Typ), VGS = -2.5V
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This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices ar.
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